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The AVS Topical Conference on Atomic Layer Deposition (ALD 2008) will be a three-day meeting (preceded by the workshop “ALD from basics to future perspectives” on Sunday afternoon), dedicated to the science and technology of Atomic Layer Deposition (ALD) of thin films. The conference will be held in Bruges, Belgium, on June 29-July 2, 2008, and is sponsored by the AVS Thin Film Division.

Atomic Layer Deposition is applied in many advanced technologies that require control of film properties in the nanometer or sub-nanometer scale. ALD finds use in semiconductor applications, such as high dielectric constant (high-k) MOS gate oxides, storage capacitor dielectrics, and copper diffusion barriers. ALD is also receiving attention for its potential application in solar energy, organic electronics, catalysis, micro-systems and biological applications. A unique attribute of ALD is the use of sequential self-limiting surface reactions to achieve conformal films with sub-monolayer thickness control.

The ALD 2008 conference will cover both fundamentals and applications of ALD:

ALD Precursors and Precursor Design
Precursor Delivery Systems
Simulation, Modeling, and Theory of ALD
ALD Surface Chemistry
Surface Preparation for ALD
Initiation of ALD Growth
Patterned and Selective Area ALD
In-situ Monitoring and Analysis
Radical, Plasma and Other Energy-Enhanced ALD Methods
Equipment and Manufacturing
Applications of ALD for Microelectronics and Nanotechnology
ALD for MEMS
ALD for Catalytic, Photovoltaic, Optical, and Magnetic Materials
Characterization of ALD Coatings
Nano-laminate or Multi-component Materials
Highly Conformal ALD Processes
Atomic layer Epitaxy and Doping
Devices Formed Using ALD Materials
Reliability of ALD Materials
Novel Applications of ALD

Conference chairs:

Erwin Kessels (Eindhoven Univ. of Technology, The Netherlands)
Annelies Delabie (IMEC, Leuven, Belgium)