Paul McIntyre, Stanford University, U.S.A.
ALD of Metal Oxide Gate Insulators on Ge and III-V
Surfaces:
Interfacial Structure-Property Relations
Ivo Raaijmakers, ASM International, Netherlands
Atomic Layer Deposition for Semiconductors:
from Technology Push to Market Pull
Yves Chabal, University of Texas at Dallas, U.S.A.
Initial growth of metal films using ALD
Junichi Murota, Tohoku University, Japan
Atomically Controlled Processing for Impurity Doping
in
Si-Based CVD Epitaxial Growth
Nicolas Blasco, Air Liquide, France
ALD Precursor Design and Optimization for next generation
DRAM Capacitors
Jim Wang, NanoNuvo Corporation, U.S.A.
Applications of ALD in Nano-Optics and Nano-lithography
Fred Roozeboom, NXP-TSMC Research Center, Netherlands
ALD for 3D integration and system-in-package
Hyunjung Shin, Kookmin University, Korea
Nanoscale Tubular Structures and Capsules of Oxides
using Atomic Layer Deposition
Simon Elliott, Tyndall Institute, Ireland
Computing mechanisms and designing precursors for ALD
Ki Hoon Lee, IPS-technology, Korea
Deposition of GST film by PE-ALD method for PCRAM applications
Heon Do Kim, Jusing Engineering, Korea
Space Divided CVD System for Next Generation Ru/SrTiO3/Ru
Capacitor Structure
Ana Londergan, Qualcomm MEMS Technologies, U.S.A.
Opportunities for ALD in MEMS and Display Applications
Kornelius Nielsch, University of Hamburg, Germany
Ferromagnetic Nanostructures by ALD: From Thin Films
towards
Nanorod based Ferrofluids
Steven George, Univ. of Colorado, U.S.A.
Surface Chemistry for ALD and MLD: Current Understanding
and Future Prospects
Mikko Ritala, Univ. of Helsinki, Finland
ALD precursors: the current state and future needs
Roy Gordon, Harvard University, U.S.A.
Step Coverage by ALD Films - Theory and Examples
of Ideal
and Non-ideal Reactions
Marc Heyns, IMEC, Belgium
ALD for highly scaled CMOS and beyond
Jeff Elam, Argonne National Laboratory, U.S.A.
New Applications for ALD in Energy Technologies