IVESC-96
International Vacuum Electron Sources
Conference 1996
(Successor to the biennial
Tri-Service/NASA Cathode Workshop)
Eindhoven, The Netherlands
July 1-4, 1996
- Organised by:
- Eindhoven University of Technology
- FOM-Institute AMOLF, Amsterdam
- Philips Research, Eindhoven
- Sponsored by:
- Eindhoven University of Technology
- Philips Display Components
- Philips Research
- Naval Research Laboratory
- Balzers Pfeiffer GMBH
- NASA
- Koninklijke Nederlandse Academie van Wetenschappen, KNAW
- The Netherlands Vacuum Society, NEVAC
- Semicon Associates
- Foundation for Fundamental Research on Matter, FOM
- Elsevier Science B.V.
- Spectra-Mat, Inc.
- Vacuum Microelectronics 158
- INTERNATIONAL COMMITTEE
- Frank Bossert, Ulm, Germany
- Raouf Z. Bahktizin, Bashkir, Russia
- Sjaak Deckers, Eindhoven, The Netherlands
- Dominique Dieumegard, Paris, France
- Mike Geis, Boston, USA
- Henry F. Gray, Washington, DC, USA
- Michael C. Green, Palo Alto, USA
- Peter A.M. van der Heide, Eindhoven, The Netherlands
- Junji Itoh, Tsukuba, Japan
- Ding Li, Shanghai, China
- Chris Maloney, Cambridge, UK
- Hisao Nakanishi, Tokyo, Japan
- Wayne L. Ohlinger, Atlanta, USA
- Tong Soo Park, Seoul, Korea
- Chan Park, Jeonju, Korea
- Edwin G. Wintucky, Cleveland, USA
- Shigehiko Yamamoto, Tsukuba, Japan
- LOCAL ORGANIZING COMMITTEE
- Sjaak Deckers (Chairman)
- Arnoud W. Denier van der Gon
- Peter Duine
- Joost Frenken
- Albert Manenschijn
- Carla Schreurs (Congress Bureau)
- Udo van Slooten (Treasurer)
THIS INFORMATION IS BASED ON THE SECOND ANNOUNCEMENT AND CALL FOR
PAPERS.
FOR ANY FURTHER INFORMATION AND FOR REGISTRATION PLEASE CONTACT:
Mrs. Carla Schreurs,
University Congress Office,
Eindhoven University of Technology,
PO.Box 513, 5600 MB Eindhoven,
The Netherlands.
Phone: +31 40 2474849
Fax: +31 40 2458195
E-mail: congressoffice@ieb.tue.nl
AIM AND SCOPE
The first International Vacuum Electron Sources Conference, IVESC '96, will
be held in Eindhoven,
The Netherlands, from 1-4 July, 1996. This conference is the successor to
the biennial series of Tri-
Service/NASA Cathode Workshops, held in the USA since 1978, and expands it
into a fully
international scientific conference. IVESC '96 covers basic principles,
technologies and applications
of various vacuum electron sources. In comparison with the former
Tri-Service/NASA Cathode
Workshops, IVESC '96 will put more emphasis on basic principles.
Emerging application areas such
as flat displays (plasma, PALC, FE-array, thin CRT), nanotips for analytical
devices and electrodes
for new generations of gas discharge lamps, rely heavily on recent
developments of vacuum
electron sources. It is our aim to cover these developments at this conference
as well.
The conference will include both oral and poster presentations. No parallel
sessions are scheduled.
Panel discussions on particular scientific or industrial problems can be
arranged upon request from
the scientific community and industry, by the Local Organizing Committee.
Those interested should
write to Sjaak Deckers at the contact address of the conference.
TOPICS, KEYWORDS AND INVITED LECTURES
The IVESC '96 Conference will deal with:
EXHIBITION
In a special exhibition manufacturing and service companies in the field of
vacuum electron sources
and of related vacuum and research equipment will have the opportunity to
exhibit their products and offer their services.
Contact Mrs. Carla Schreurs at the Congress Office for information.
VENUE / LOCATION OF IVESC'96
The city of Eindhoven
Eindhoven differs from ordinary towns in many ways. It is a town that has to
be discovered:
spaciously planned, internationally oriented, young and alive with activity.
Eindhoven's unique
contemporary character is a result of its whirlwind development from
a small provincial town to one
of Europe's most modern regional capitals. Today Greater Eindhoven has
more than half a million
inhabitants and has expanded into a commercial, industrial and cultural
centre of international
standing. It has everything to match: world-famous companies, the highest
concentration of high-tech industry in the Netherlands,
a university of technology, its own airport, excellent hotels, expo
hall and conference centres. Also a unique shopping centre,
called "Heuvel Galerie", the Holland
Casino and the Frits Philips Music Centre. All this together with the
beautiful scenery of the friendly
province of Brabant will guarantee you an excellent stay in the
city of Eindhoven.
Eindhoven University of Technology
The Eindhoven University of Technology is one out of three universities
in the Netherlands
specialised in technical studies. This young, high-tech university was
established in 1956 and will
thus celebrate its fortieth anniversary in 1996! It welcomes around one
thousand new students each
year. The university provides high-level Ph.D. teaching programmes and
is an important partner at
several national research schools.
Students are given ample opportunity to practice their skills in contract
research projects of the
various departments, mostly executed in cooperation with Dutch industry.
Researchers from
Eindhoven University of Technology have been active in international
science events for years and
are keen to present their university to colleagues from all over the world.
Welcome!
Location of IVESC '96
In the course of November 1995 a fully renewed Auditorium will be opened.
As the lively heart of
the university this building is located at walking distance from the
city centre. It has 16 lecture
rooms of different sizes, 7 of which are amphi-theatres. With the most
advanced equipment at our
disposal and conference facilities matching the highest professional
standards, we will certainly have
fulfilled the basic material conditions for a high-quality conference.
Having IVESC '96 planned in the
first week of July, which means summer holidays for students, our
guests can count on full space,
service and attention from the Auditorium staff.
ABSTRACTS AND CALL FOR PAPERS
Participants are cordially invited to contribute a paper to the scientific
programme and to submit an abstract,
which must be received by us before January 15, 1996.
Please follow the instructions
given in the separate abstract
instructions sheet that goes with this mailing. Contributions will be
judged by the Organizing and
International Committee and may be scheduled for either oral or poster
presentation. Notification of
acceptance and a draft programme will be sent to each contributor in
the first week of March.
In Applied Surface Science, published by Elsevier Science, we have
found a well known and highly
appreciated Journal to publish our proceedings. All papers will be
refereed in accordance with the
standards set by the Editor of ASS. These standards include that the
paper must represent original
and not previously published work, and that the paper size is 4-5
printed pages in ASS format.
To ensure rapid publication the deadline for full manuscripts of all papers
will be May 31, 1996, i.e. one
month before the conference. This allows discussion of the refereed
paper with the editors at the
conference and facilitates acceptance of the paper when only minor
changes are necessary.
Upon acceptance they will be published in a special issue of Applied
Surface Science at the
beginning of 1997. For this issue Organizing Committee members
Peter Duine, Albert Manenschijn
and Sjaak Deckers will act as guest editors.
Deadlines:
Abstracts: January 15, 1996
Notification of acceptance: March 1996
Deadline for full manuscripts: May 31, 1996
Conference: July 1-4, 1996
Publication of proceedings: early 1997
Coordinated meetings:
IVMC, St. Petersburg-ship to Moscow July 8-13, 1996
IFES, Moscow July 14-19, 1996
Please send your abstract to:
Mrs. Carla Schreurs
Eindhoven University of Technology
University Congress Office
P.O. Box 513, 5600 MB Eindhoven
The Netherlands
SOCIAL EVENTS
Special Tour de France Programme
For once-in-a-lifetime the Tour de France, the world's largest cycling
contest, will start in the
Netherlands in 1996. The whole country, and specially the
Province of Brabant will then get to see
Miguel Indurain and other stars cycling through our old
village landscapes in the prologue and first
etappe of the course. Visiting the Netherlands for IVESC '96 you
will have the unique opportunity to
enjoy the atmosphere and catch a glimpse of the cycling event.
The University Congress Office will
organize a special programme on Sunday, June 30th, for those who
would like to be a part of this
cycling event.
A bus will take you to one of the hot spots in the Brabantine region,
along the route of the first
etappe. From there you will have a first class view on toppers,
peloton and losers, and be
surrounded by radio and television reporters and all kinds of
promotional activities. Food and
beverage will be taken care of. This day of sensation and
entertainment promises to be
remembered as a most spectacular launching of the IVESC conference
series. At the end of the
day you will be transfered to the proper location for pre-registration
and welcome drinks offered by
the Organizing Committee.
In connection with this and in view of special flight fairs during
weekends, you may consider
travelling on Saturday, June 29th.
Other Social Events
Included in the conference progamme are:
- Pre-registration facility and welcome cocktail on Sunday, June 30th
- A reception and musical event on monday evening, July 1st
- A guided tour on Tuesday, July 2nd, through the Philips Competence
Centre, the Evoluon,
followed by the official conference dinner.
A special keynote speaker is invited for this occasion.
Company visits
Participants in IVESC '96 will have the opportunity to visit relevant
companies and organizations in
the Netherlands. The Organizing Committee will provide further
information with the provisional
programme, preceeding the conference.
Accompanying Persons Programme
If there is sufficient interest a partners programme will be organized.
Further information will be sent
separately to all participants after registration. Plans include:
- a visit to National Park "De Hoge Veluwe" with a visit to the
internationally famous
Kroller-Muller Museum. This Museum offers modern and impressionnists
art, among which a large
collection of Vincent van Gogh's paintings
- a guided visit to the city of Maastricht, with the opportunity to have
guided tours through the
medieval town and a boat trip on the river Meuse
- a bus tour through the Brabantine region, with stops at several
interesting sites, such as the
National Bell Museum and/or the Wooden Shoe Museum
- visits to cities like Amsterdam, Antwerp, Brussels and Aachen,
depending upon interest
- a tour to and through Kinderdijk, a typical Dutch area in the west
of the country, where you
can admire our traditional windmills and the beautiful Dutch polders.
CONFERENCE FEE / EXTRAS
The conference fee includes participation of the full conference programme
starting on Monday, July
1st, 1996 and closing on Thursday, July 4th, 1996, before dinner, plus 1
book of abstracts, 1 copy
of proceedings (to be sent afterwards), 1 conference dinner ticket,
4 lunches, a welcome cocktail on
Sunday, a reception hosted by the city of Eindhoven on Monday,
coffee/tea/refreshments.
There is a reduced fee for participants who want to join only one
conference day, including 1 book
of abstracts, 1 copy of proceedings, 1 lunch and coffee/tea/refreshments.
If you want to participate
for more than one day (although not the full period) the full fee will be
charged.
Limited financial support may be provided by the Local Organizing Committee
to scientists from less
developed countries.
The conference fee does not include the Tour de France Programme on Sunday,
June 30th, nor
participation in accompanying persons programmes.
Types of registration
Early registration, until May 1st Dfl. 650
Late registration, after May 1st until July 1st 750
On site registration 800
Single day fee, early/late/on site registration 300/350/400
Students registration, excl./incl. proceedings 400/500
Formal letter of approval by supervisor required upon registration
EXTRAS
Participants may register separately for the Tour de France Programme on
Sunday, June 30th. One
day participants or accompanying persons may register separately for the
conference dinner plus
guided tour in the Philips Competence Centre "Evoluon" on Tuesday,
July 2nd, 1996. To join
lunches at the university accompanying persons may purchase lunch
tickets on site.
Tour de France Programme Dfl. 125
Conference dinner (for accompanying persons) 120
REGISTRATION
To obtain registration and hotel reservation forms please contact:
Mrs. Carla Schreurs
University Congress Office
Eindhoven University of Technology
P.O. Box 513, 5600 MB Eindhoven
The Netherlands
Phone: +31 40 2474849
Fax: +31 40 2458195
E-mail: congressoffice@ieb.tue.nl
PAYMENT
Payment should be made in Dutch guilders. Participants will receive a
confirmation after registration
and are requested to make their payment, for the total amount of the
conference fee and extras,
preferably by bank transfer, to:
ABN-AMRO Bank, P.O. Box 515
NL-5600 MB Eindhoven
Account number: 52.77.41.426
Eindhoven University of Technology
Please specify: "IVESC'96" and
name of participant
You may also allow the University Congress Office to charge your credit
card account for the
appropriate amount by mailing order, indicating the required credit card
data in your registration
form.
CANCELLATION
Cancellation will be free until Wednesday, May 15th, 1996 at the latest.
If your registration is
cancelled after this date a fee of DFl. 150 will be charged. In the event
you cannot participate, you
are free to be replaced by a colleague, without extra costs.
ACCOMMODATION
Like most universities in the Netherlands, the Eindhoven University of
Technology does not have its
own campus accommodation. Therefore, the University Congress Office has
taken optional group
reservations in several hotels, in order to keep costs low. Prices given
below are only valid if
booked through the University Congress Office. They will take care of you
reservation but payment
should be made directly to the hotel when checking out. A deposit is not
required.
Please be aware that options are limited: on June 29th the Tour de France
1996 will commence in
the Netherlands. Because of the thousands of people expected in our area
for this major event it will
be extremely difficult, if not impossible, to have individual, last minute,
or extra bookings. To
guarantee yourself a room, preferably in your first choice hotel, please
send in your hotel
reservation form as soon as possible, if convenient even before sending in
your offical registration
form. The same circumstances force us to charge full room costs, on behalf
of the hotels involved,
in the case of late cancellations or no show on the expected arrival date.
Single Double
Dorint Hotel ***** Dfl. 205 / 245
30 rooms available. Very comfortable business hotel in the heart
of town. With all luxurious facilities and its own parking place,
close to the modern shopping centre "De Heuvelgalerie", the
nationally famous Music Centre Frits Philips and city nightlife.
You can walk to the university (15 minutes), take a taxi
or go by bus to the Central Railway Station, which is a 5 minute
walk from the university.
Hotel Tulip Inn *** Dfl. 140 / 160
40 rooms available. A nice hotel situated on the market place in
the city centre. It is a pedestrian area, with shops and pubs all
around. Few parking facilities available but it is very close to
the Central Railway Station and only 10-15 minutes walking
distance from the university.
Hotel Golden Tulip **** Dfl. 110 / 130
75 rooms available. Luxurous business hotel in the quiet
surroundings of Geldrop, a village on the outskirts of Eindhoven.
Can easily be reached by bus within 15-20 minutes from
Eindhoven Central Railway Station.
Hotel Parkzicht *** Dfl. 87.50 / 125
30 rooms available. Charming, typically Dutch hotel close to the
City Theatre, at a small distance from the city centre in a quiet
green neighborhood. Has its own bar and restaurant. Plenty of parking
facilities and regular busroutes that bring you to the Central
Railway Station within 10 minutes. From the station you can walk to the
university in 5 minutes time.
Campanile Hotel *** Dfl. 90 / 108
75 rooms available, from July 1st. If you plan to arrive during the
weekend we would advise to choose one of the other hotels.
Campanile is a moderate hotel with good facilities on the
outskirts of Eindhoven, with regular busroutes to the city centre
and Central Railway Station (15 minutes). Walking distance
from the station to the university is 5 minutes. Limited number of
rooms suitable for 3 persons, prices available upon request.
PRELIMINARY PROGRAM
NOTE: In this preliminary program only presenting or first authors are listed.
Monday, July 1
- 8.00 Registration
- 9.00 Opening and welcome
- 9.20 Session A: Fundamentals of Electron Emission
- A1 Invited: The local work function: concept and application.
Wandelt, K., Institut f|r Physikalische und Theoretische Chemie, Universit,t
Bonn, Bonn, Germany.
- A2 Invited: First-principles theory of surface states, work functions, and
surface relaxations of clean and adsorbate-covered surfaces.
Scheffler, M, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany.
- A3 Scanning Probe Microscope Imaging of Cathode Surface Work Function
Distribution.
Devonshire, R., High Temp. Science Lab., University of Sheffield, Sheffield,
United Kingdom.
- 11.10 Session B: Thermionic Emission Technology
- B1 Thermionic multilayer monolith cathodes.
Maslennicow, O., SSPE TORIY, Moscow, Russia.
- B2 Physical analysis of dispenser-type inserts from extended testing of hollow
cathodes.
Ohlinger, W.L., Westinghouse Electric Corp., USA.
- B3 Emission characteristics of dispenser cathodes with a fine-grained tungsten
toplayer.
Kimura, S., Electron Device Division, Toshiba Corporation, Yokohama, Japan.
- B4 Thermionic cathodes studied by low energy ion scattering.
Denier van der Gon, A.W., Faculty of Physics, Eindhoven University of
Technology, Eindhoven, The Netherlands.
- 14.00 Session C: nanotube Field Emission
- C1 Invited: Field emission from an atomic wire.
Smalley, R.E., center for Nanoscale and Technology, department of Chemistry and
Physics, Rice University, Houston, USA.
- C2 Invited: Field emission from carbon nanotubes.
De Heer, W., Institut de Physique Experimental EPFL, PHB Ecublens, 1015
Lausanne, Switzerland.
- C3 Thin films consisting of carbon nanotube as a new material for emission
electronics.
Sinytsin, N.I., IRE, Russian Academy of Sciences, Saratov, Russia.
- 15.50 Session D: Field Emission Tip Applications
- D1 Invited: High brightness sources in electron microscopes and lithography
systems.
Kruit, P., Dept. of Applied Physics, Delft University of Technology, Delft, The
Netherlands.
- D2 Field electron spectra of the W-Ce system at high electric fields.
Tumareva, T.A.,Saint-Petersburg State University of technology, St. Petersburg,
Russia.
- D3 Resonant tunneling electron beam source using GaAs/AlAs/GaAs field emitter.
Ohshima, T., Central Research Lab., Hitachi Ltd., Tokyo, Japan.
- D4 Characterisation and comparison of field emitters in a scanning transmission
electron microscope.
James, E.M., Cavendish Laboratory, University of Cambridge,
Cambridge, United Kingdom.
Tuesday, July 2
- 8.30 Session E: Thermionic Emission Fundamentals
- E1 Invited: Emission properties of top-layer scandate cathodes prepared by LAD.
Gaertner, G., Forschungslaboratorien, Aachen, Philips GmbH, Germany.
- E2 Work functions for models of scandate surfaces.
Mueller, W., Research 2000, Inc., Westlake OH, USA.
- E3 Emission properties of compounds in the BaO-Sc2O3-WO3 system.
Magnus, S., MSE Dept., Georgia Institute of Technology, Atlanta, USA.
- E4 A model system for scandate cathodes.
Zagwijn, P.M., FOM-Institute for Atomic and Molecular Physics, The Netherlands.
- E5 Work function and surface atomic structure of high temperature oxide
superconducting cathodes.
Shkuratov, S.I., Institute of Electrophysics, Urals
division of the Russian Academy of Sciences, Ekatarinburg, Russia.
- E6 Scandate cathode coated with Mo and Sc Films.
Sasaki, S., Electron Tube & Devices Division, Hitachi, Ltd., Tokyo, Japan.
- 11.10 Session F: Photo-electron Emission
- F1 High-efficiency photocathodes on the NEA-GaAs basis.
Denisov, V.P., Institute for Computational Mathematics, St-Petersburg State
University, St-Petersburg, Russia.
- F2 Alkali ions implantation into metallic photocathodes improved ultrashort
electron emission.
Afif, M., Lab. de Sciences et IngSnierie des Surfaces, Universite Claude Bernard
- Lyon 1, Villeurbanne, France.
- F3 Energy and angular distribution of short electron pulses produced by strong
laser field.
Zinoviev, A., NPO Akadempribor, Tashkent, Uzbekistan.
- F4 Silicium Photocathodes with array of tips in a photo-injector.
Querrou, M., Laboratoire de Physique Corpusculaire, University Blaise Pascal,
AubiSre, France.
- 14.00 Poster Session G (see below)
- 16.00 Session H: Electrode Applications
- H1 Invited: Electrodes for gas discharge lamps.
Postma, P., Philips Forschungs Labor, Aachen, Germany.
- H2 Invited: A 40-inch plasma display for wall hanging HDTV receiver.
Murakami, H., NHK Science & Technology Research Labs, Setagaya-ku, Tokyo, Japan.
- H3 Studies of Hot-Cathode/Low Pressure Discharge Lamps in a Manufacturing Test
Cell.
Devonshire, R., High Temp. Science Labs., University of Sheffield, Sheffield,
United Kingdom.
Wednesday, July 3
- 8.30 Session J: Thermionic Emission Applications
- J1 Invited: Present developments and status of electron sources for high power
gyrotron tubes and free electron masers.
Thumm, M., ITP, Forschungszentrum Karlsruhe, Karlsruhe, Germany.
- J2 Invited: Thermionic cathodes for CRT's: its existing state.
Nakanishi, H., Uchida Kogyo Company LTD, Tokyo, Japan.
- J3 Metal-alloyed cathodes for high-power tubes.
Ilyin, V.N., SSPE TORY, Moscow, Russia.
- J4 10 years of successfull application of mixed-metall-matrix cathodes in highly
reliable satellite TWT's- design; production; performance.
Bossert, F., Opto- and Vacuumelectronics, AEG Elektronische R"hren GmbH, Ulm,
Germany.
- J5 Metal alloy cathode for electron gun of high resolution tube.
Kultashev, O., , Cathode Department, SRPC ISTOK, Fryazino / Moskow Reg., Russia.
- 11.00 Session K: Thin Film Field Emission Technology
- K1 Invited: Diamond Cold Cathodes.
Geis, M.W., Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
MA, USA.
- K2 Electron emission characteristics of diamond like carbon films deposited by
laser ablation technique.
Park, Chan, School of Physics & Technology, Jeonbuk
National University, Jeonju, Korea.
- K3 Characterization of field emission properties of diamond thin films.
Bakhtizin, R.Z., Dept. of Physical Electronics, Bashkir State University, Ufa,
Russia.
- K4 Field emission from carbon structures.
Gr"ning, O., Physics Department, University of Fribourg, Fribourg, Switzerland.
- 14.00 Poster Session L (see below)
- 15.30 Session S: Explosive Electron Emission
- S1 Invited: Generation of pulsed power electron beams.
Mesyats, G.A., Electrophysics Institute, Russian Academy of Sciences,
Ekaterinburg, Russia.
- 16.00 Session M: Field Emission Arrays
- M1 Invited: Cold Cathode Sources for Thin CRT's.
Pressley, R.J., Silicon Video Corporation, San Jos, CA, USA.
- M2 Invited: Recent development and applications of field emitter arrays in
Japan.
Itoh, J., Electron Devices Division, Electrotechnical Laboratory, Ibaraki,
Japan.
- M3 Field-emitter-array development for microwave applications.
Holland, C., SRI International, Menlo Park CA, USA.
- M4 An analytical model of the electron emission distribution from a single
Spindt-type field emitter: comparison of theory with experiment .
Jensen, K.L., , Electronic Science & Technology Div., Naval Research
LaboratoryWashington DC, USA.
- M5 Enhancement of field emission from cathodes with superthin diamond-like
carbon films.
Litovchenko, V.G., Institute of Semiconductor Physics, National
Academy of Sciences, Kiev, Ukraine.
- M6 Comparison of present gated field emitter array capability for high total
current apllications - a user's view.
Green, M.C., Microwave Power Tube Products
Division, Communications & Power Industries, Palo Alto CA, USA.
Thursday, July 4
- 8.30 Session N: Thin Film Field Emission Fundamentals
- N1 Invited: Calculation of field emission from diamond surfaces.
Cutler, P.H., Dept. of Physics, The Pennsylvania State University, University
Park PA, USA.
- N2 Invited: Photoelectron emission physics of negative electron affinity
diamond.
Pate, B.B., Dept. of Physics, Washington State University, Pullmann WA, USA.
- N3 Monte Carlo simulation of transport in wide band-gap materials.
Miskovsky, N.M., Pennsylvania State University, University Park PA, USA.
- N4 Photo-electron emission from the negative electron affinity natural
(100)-diamond surface combined with evaporation of Cs and Co.
Diederich, L., Physics Department, University of Fribourg, Fribourg,
Switzerland.
- N5 Nonequilibrium phenomena accompanying high-current thermal field emission.
Litvinov, E.A., Institute of Electrophysics, Russian Academy of Sciences, Ural
Division, Ekaterinburg, Russia.
- N6 Secondary emission in heat-treated cvd-diamonds.
Maschenko, V.E., Moscow Institute of Steel and Alloys, Moscow, Russia.
- 11.10 Session O: Secondary Emission
- O1 Invited: Secondary electron emission studies.
Shih, A., Naval Research Laboratory, Washington DC, USA.
- O2 Influence of charging on the secondary electron yield of insulators.
Scholtz, J.J., Philips Research, Eindhoven, The Netherlands.
- O3 Secondary electron emission from chemical vapor deposited diamond films with
negative electron affinity.
Krainsky, I.L., NASA Lewis Research Center,
Cleveland OH, USA.
- 12.30 Conference Announcements
- 14.00 Session P: Ferro-electric electron Emission
- P1 Invited: Ferroelectric electron emission: principles and technology.
Riege, H., LHC Division, CERN, Geneva, Switzerland.
- P2 Ferroelectric electron emission flat panel displays.
Shur, D., Dpt. of E.E.P.E., Tel-Aviv University, Ramat-Aviv, Israel.
- P3 Electron emission out of ferroellectrics stimulated by its switching.
Sidorkin, A.S., Physics Department, Voronezh State University, Voronezh, Russia.
- 15.30 Session R: Field Emission Tips
- R1 Invited: Nanotips and applications: field emission from atom-sources.
Binh, V.T., Laboratoire d'Imission Ilectronique, Universite Claude Bernard Lyon
1, Villeurbanne, France.
- R2 Stable field electron emission from liquid metal surface.
Baskin, L., GUT / Physics Department, State University of Telecommunications,
St. Petersburg, Russia.
- R3 Experimental evaluation of transition metal nitrides as field emitter.
Endo, M., Department of Elec. & Electronic Eng., Muroran Institute of
Technology, Muroran, Japan.
- R4 A novel vacuum electron source based on ballistic electron emission.
Borgonjen, E.G., Dept. of Applied Physics, Delft University of Technology,
Delft, The Netherlands.
POSTER SESSIONS
Tuesday, July 2, 14.00-15.30 Session G: Poster session I
- G1 Simulation of I-V characteristic in a planar diode. Venkateswarlu, D.S.,
Inst. of Technology, Dept. of Electronics Engineering, Banaras Hindu University,
Varanasi, India.
- G2 Modification thermionic emission equation. Moos, E., Academy of Agriculture,
Ryazan, Russia.
- G3 Work function anisotrophy across tenzor description. Moos, E., Academy of
Agriculture, Ryazan, Russia
- G4 Method for investigation of a work functon distribution on a cathode surface.
Kiselev, A.B. , Cathode Department, SRPC Istok, Fryazino / Moscow Reg., Russia.
- G5 A distribution of workfunction of ferromagnetics around the Curie point.
Korolev, S. , Russian Electrotechnical Institute, Moscow, Russia.
- G6 Research by emission spectral method of characteristics of LaB6 surface in a
process of an operation of appliances. Korolev, S. , Russian Electrotechnical
Institute, Moscow, Russia.
- G7 Emission-spectral method of a research of a surface of emission materials.
Korolev, S. , Russian Electrotechnical Institute, Moscow, Russia.
- G8 Radiation recombination in tetrahedral carbon films. Maschenko, V.E. ,
Moscow Institute of Steel and Alloys, Moscow, Russia.
- G9 Shaping of predetermined emissive areas by ion local etching of thick film of
hafnium on the surface of dispenser cathodes. Gurkov, Yu.V. , Cathode
Department, SRPC ISTOK, Fryazino / Moscow Reg., Russia.
- G10 Technology of a cheap dispenser cathode for kinescopes. Maslennicow, O. ,
SSPE TORIY Moscow, Moscow, Russia.
- G11 Metal-porous cathodes-efective sources of electron emission for high-power
gyrotrons. Ilyin, V.N., SSPE TORIY Moscow, Moscow, Russia.
- G12 Spiral cathodes for micro-wave heating magnetrons. Polivnikova, O.V. ,
Cathode Department, SRPC ISTOK, Fryazino / Moscow Reg., Russia.
- G13 Design and fabrication of electron sources for high-power CW gyrotrons.
Louksha, O.I. , Dept. of Physical Electronics, State Technical University, St.
Petersburg, Russia.
- G14 Gigantic cathode-heating units of powerfull electron injectors;
peculiarities of calculations, design, technology of production. Korolev, S. ,
Russian Electrotechnical Institute, Moscow, Russia.
- G15 Distribution of the working zone of the power line cathode. Grigorov, G.J. ,
Nat.Comm. Vacuum Physics & Techniques, Inst. of Electronics, Bulg. Acad. of Sc.,
Sofia, Bulgary.
- G16 Design and technological peculiarities of making a vacuum IC of a
thermocathode-based A.C. amplifier. Mukhurov, N.I., Institute of Electronics,
Belarus Academy of Sciences, Minsk, Belarus.
- G17 Practical design of film-type multizone matrix thermo-cathodes for vacuum
electron microdevices. Mukhurov, N.I., Institute of Electronics,, Belarus
Academy of Sciences, Minsk, Belarus.
- G18 Problems and prospects of thermionic emission study in vacuum diode systems
with controlled micro- and nanospacing. Solonovich, V.K. , Inst. of Solid State
& Semiconductors, Belarus Academy of Sciences, Minsk, Belarus.
- G19 Microstructured impregnated-electrode-type liquid metal field emission
cathode. Mitterauer, J. , Inst. fur Allg. Elektrotechnik & Elektronik, Technical
University of Vienna, Vienna, Austria.
- G20 Electron beam diagnostics for field emitters. Phillips, P.M., Electronic
Science & Technology Div., Naval Research Laboratory, Washington D.C., USA.
- G21 Electron trajectories for a Spindt-type field emitter via boundary element
simulation, Zaidman, E.G. ,
Electronic Science & Technology Div., Naval Research Laboratory, Washington DC,
USA.
- G22 Field emitting cathodes for electron-beam tubes. Znamirowski, Z. , Inst. of
Electron Technology, Technical University of Wroclaw, Wroclaw, Poland.
- G23 On the stability of atomically sharp field emitters, Fransen, M.J. ,
Philips Research Laboratories, Eindhoven, the Netherlands.
- G24 SEM study of cold emission from diamond coated Si tips. Galstyan, V.G. ,
Lab. of Cristallization from Vapor Phase, Institute of Crystallography, Moscow,
Russia.
- G25 Point electron sources based on silicontips coated by diamond and silicon
carbide. Givargizov, E.I.
Institute of Crystallography, Russian Academy of Science, Moscow, Russia.
- G26 Point sources of electrons and ions based on adsorbed layers of Si on the
surface of transition metals. Golubev, O. L., A.F.Ioffe Phys. Tech. Inst.,
Russian Academy of Science, St. Petersburg, Russia.
- G27 Scanning Atom Probe: an innovatory new instrument for the investigation of
individual field emitting tip apexes of a micro-tip array. Nishikawa, O. , Dept.
of Materials Sc. & Engineering, Kanazawa Inst. of Technology, Kanazawa-South
Ishikawa, Japan.
- G28 Work function reduction of GaAs (110) by Cs adsorption. Guo, T. , Dept.
Electronic Sc. & Applied Physic, Fuzhou University, Fujian, P.R. of China.
- G29 Electron emission from shallow GaAs p-n junctions. Guo, T. , Dept.
Electronic Sc. & Applied Physic, Fuzhou University, Fujian, P.R. of China.
- G30 Vacuum electrostatic bonding between glass and silicon for translucent
photocathodes. Liwei Lin, Dept. of Physics, Fuzhou University, Fuzhou, P.R. of
China.
- G31 XPS Analysis and its computer processing of the GaAs photocathode during its
activation. Huang, Z.
Dept. of Physics, Fuzhou University, Fujian, P.R. of China.
- G32 Investigation of semiconducting field emission electron sources. Egorov,
N.V., Institute for Computational Mathematics, St-Petersburg State University,
St. Petersburg, Russia.
- G33 MIM-cathode at low temperatures: experiment theory. Khaskelberg, M.B.,
General Physics, State Pedagogical Institute, Tomsk, Russia.
- G34 Area effect in a thin film MIM emitter. Troyan, P.E. , Dept. of Physical
Electronics, Tomsk State Academy CSR, Tomsk, Russia.
- G35 Electric field and electron trajectory analysis of transfer mold field
emitters. Hasegawa, T. , Materials & Devices Research lab., R & D Center,
Toshiba Corp., Kawasaki Kanagawa, Japan.
- G36 Amplitude and phase recovery in point projection microscopy. Bleloch, A.L.,
Cavendish Laboratory, Cambridge University, Cambridge, United Kingdom.
- G37 Analysis of microwave generation by field emitted electrons moving in
crossed electric and magnetic fields. Filip, V.M., Faculty of Physics,
University of Bucharest, Bucharest-Magurele.
- G38 A new approach of high power electron beam gun designing using scaling
rules. Wojcicki, S., Institute of Vacuum Technology, Warsaw, Poland.
- G39 Application of Taguchi method for electron gun optimization. Felba, J.,
Inst. of Electronic Technology, Technical University of Wroclaw, Wroclaw,
Poland.
- G40 Model of beam formation in glow discharge electron gun with cold cathode.
Felba, J., Inst. of Electronic Technology, Technical University of Wroclaw,
Wroclaw, Poland.
- G41 On the use of luminous ion beam for optimizing the transmission of charged
particles through complex electron or ion-optical systems. Belykh, S.F. ,
Arifov Institute of Electronics, Tashkent, Uzbekistan.
- G42 The criterion for emission type and main parameters of vacuum arc cathode
spots on various metals. Nagaibekov, R.B., Institute of Electronics, Tashkent,
Uzbekistan.
- G43 Effctive emitters of positive ions. Rasulev, U.KH., Arifov Institute of
Electronics, Uzbek Academy of Science, Tashkent, Uzbekistan.
- G44 On some features of thermionic and photo-electron emission in vacuum devices
with plane parallel electrodes and adjustable micro-spacing. Kukharenko, L.V.,
Inst. of Solid State & Semiconductors, Academy of Sciences of Belarus, Minsk,
Belarus.
Wednesday, July 3, 14.00-15.30 Session L: Poster session II
- L1 Thermochemistry in the BaO.Sc2O3.WO3 ternary system. Magnus, S. H., MSE
Dept., Georgia Institute of Technology, Atlanta, USA.
- L2 Thermochemistry of the BaO-Sc2O3 -Al2O3 ternary system. Ohlinger, W.L., MSE
Dept., Georgia Institute of Technology, Atlanta, USA.
- L3 Experimental study on Zr-O/W(100) surfaces by using of XPS and LEED. Kawata,
S., Dept. of Electrical and Electronic Engineering, Muroran Inst. of Technology,
Muroran, Japan.
- L4 Workfunction reduction of W(110) and Mo(110) surfaces by Cs+ and Ba+
bombardment and thermodesorption. Atabaev, B.G., Arifov Institute of
Electronics, Tashkent, Uzbekistan.
- L5 Scanning Auger Measurements on activated and sputter-cleaned scandate
cathodes. Van Slooten, U and P. Duine, P, Philips Research Labs, Eindhoven, The
Netherlands.
- L6 Ar desorption from Os-Ru coated cathodes. Manenschijn, A., Innovation and
Technology Center, Philips Display Components, Eindhoven, the Netherlands.
- L7 Investigation in oxide coated tungsten wire cathodes. Schipper, D.J., Centre
for Manufacturing Technology, Philips Electronics, Eindhoven, the Netherlands.
- L8 Spoiling and restoring the electron emission of impregnated cathodes.
Schipper, D.J. , Centre for Manufacturing Technology, Philips Electronics,
Eindhoven, the Netherlands.
- L9 Emission characterisation of chemically modified oxide-coated cathodes.
Wintucky, E.G., Electron Beam Techn. Branch, Space Electronics Div., NASA Lewis
Research Center, Cleveland OH, USA.
- L10 An adequate comparison of emission coatings and optimal choice of them for
appliances. Korolev, S. , Russian Electrotechnical Institute, Moscow, Russia.
- L11 Thermodynamics of processes in oxide coatings; a theory and results of a
research of processes of activition of oxide cathodes in appliances by an
emission-spectral method. Korolev, S., ssian Electrotechnical Institute, Moscow,
Russia.
- L12 Surface structure of dispenser cathodes. Ashkinazi, L. A., Moscow State
Istitute of Electronics and Mathematics, Moscow, Russia.
- L13 A work model for barium dispenser cathodes with surface covered by metal Os,
Ir or Os-Ir-W alloy layer.
Makarov, A.P., Cathode Department, SRPC ISTOK, Fryazino / Moscow Reg., Russia.
- L14 Generation of negative oxygen ions on the surface of barium thermionic
cathodes. Kniazev, A.Ya., Cathode Department, SRPC ISTOK, Fryazino / Moskow
Reg., Russia.
- L15 Technology and emission properties of a dispenser cathode with a controlling
porosity. Chubun, N.N., Cathode Department, SRPC Istok, Fryazino / Moscow Reg.,
Russia.
- L16 Extra-long-life W-Os dispenser cathode for a satellite TWT. Galina, N.M.
Cathode Department, SPRC ISTOK. Fryazino / Moscow Reg., Russia.
- L17 Study of emission properties and cathode life of reservoir dispenser cathode
by Miram's curves. Djubua, B.CH., Cathode Department, SRPC Istok, Fryazino /
Moskow Reg., Russia.
- L18 NASA/Tri-Service cathode life test facility. Windes, D. Naval Surface
Warfare Center, Crane IN, USA.
- L19 Life test performance of reservoir-type barium dispenser cathodes. Wintucky,
E.G.,Electron Beam Techn. Branch, Space Electronics Div., NASA Lewis Research
Center, Cleveland OH, USA.
- L20 Predicting cathode life expectancy and emission quality from PWFD
measurements. Cattelino, M., Communications & Power Industries, Microwave Power
Tube Products Div., Palo Alto CA, USA.
- L21 Application of M-type dispenser cathodes for long-life space traveling wave
tubes. Sugimori, K.,
Electron Device Division, Toshiba Corporation, Otawara-city, Tochigi, Japan.
- L22 Field emission tip regeneration and applications. Picornell, T.P., Cavendish
Laboratory, University of Cambridge, Cambridge, United Kingdom.
- L23 Study of carrier flows in P-type and N/P-type Si field emitter arrays.
Kanemaru, S., Electrotechnical Laboratory, Ibaraki, Japan.
- L24 Flicker noise charateristics of Si FEAs. Sarsembinov, D., Process
Fundamental Section, Electrotechnical Laboratory, Tsukuba-shi Ibaraki, Japan.
- L25 Simple fabrication process of high-density field-emission arrays. Borkowicz,
Z., Technical University, Institute of Electron Technology, Wroclaw, Poland.
- L26 Directionally solidified eutectic composites as field emitting cathodes.
Egorov, N.V., Inst. for Computational Mathematics, St-Petersburg State
University, St. Petersburg, Russia.
- L27 Nanodimentional field emitter array conception. Zakhvitcevich, S.A., Vacuum
Microelectronics Lab., Inst. of Electronics, Belarus Academy of Science, Minsk,
Belarus.
- L28 Porous silicon field emitters for display applications. Kleps, I., Research
Inst. for Electronic Components, Bucharest, Rumania.
- L29 Dependency of emission properties on cathode geometry in diamond cold
cathodes. Zhirnov, V.V., Lab. of Cristallization from Vapor Phase, Institute of
Crystallography, Moscow, Russia.
- L30 Production methods and parameters of carbon field emission cathodes for
different purposes. Suvorov, A.L., Dept. of Nuclear Physics, Inst. of
Theoretical & Experimental Physics, Moscow, Russia.
- L31 Thin film cathode for vacuum integrated circuits. Govyadinov, A.N., Vacuum
Microelectronics Lab., Inst. of Electronics, Belarus Academy of Sciences, Minsk,
Belarus.
- L32 Secondary electron emission/surface composition and modes activating of
metal alloy cathodes. Zemchikhin, E.M., Cathode Department, SRPC ISTOK,
Fryazino / Moscow Reg., Russia.
- L33 The self-consistent cathode emission characteristics of powerful microwave
magnetron-type devices. Sominski, G., Dept. Physical Electronics, State
Technical University, Saint-Petersburg, Russia.
- L34 Correlation of the variation in surface stoichiometry and secondary electron
yield under electron bombardment of insulators. Hopman, H.J., FOM-Institute
AMOLF, Amsterdam, the Netherlands.
- L35 Submicrochannel plate multipliers. Govyadinov, A.N., Inst. of Electronics,
Belarus Academy of Sciences, Minsk, Belarus.[JD1]
- L36 Life test performances of thermionic cathodes. D. Dieumegard, Thomson Tubes
Electroniques, 2 rue Latecoere, 78140 Velizy, France.